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10 layers580 nodes2,376 dependencies9 chokepoints112 bottlenecks6,500+ companiesnode size = companies identified

ALD (thermal ALD/PEALD/spatial ALD)

BOTTLENECK

ASMI leads spatial ALD and GAA transistors require three to four times more steps than FinFET, straining qualified tool supply during the node transition.

Atomic layer deposition for ultra-thin conformal films: gate dielectrics, barriers, high-k metal gates. GAA transistors require 3-4x more ALD steps than FinFET, driving tool demand. ASMI, Applied Materials, Lam, TEL compete; ASMI leads spatial ALD.

What the evidence shows

Leading ALD companies include ASM, Tokyo Electron, Lam Research, Applied Materials, Jusung Engineering, NAURA, Mattson, Oxford Instruments, and Beneq.

reports.valuates.com

Thermal ALD held approximately 53% market share in 2023, remaining the foundation for numerous applications.

marketgrowthreports.com
RESCORED JUL 2026oligopolyscaling

Who controls it

ASM InternationalTokyo ElectronApplied Materials
$3.9B market · 202310% CAGRsource

Where it sits in the stack

view in atlas

Related nodes

CVD (PECVD/SACVD/LPCVD/HDP-CVD)PVD (magnetron sputtering/ionised PVD)Epitaxy (CVD epi - Si, SiGe, III-V)Electrochemical deposition (ECD/ECP) - copper plating

Full scorecard, owner shares, supply edges and the full tracked roster are in the desk letter.

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