Atomic layer etch (ALE)

Lam Research supplies self-limiting etch systems required for 3 nm nanosheets and each wafer needs higher etch tool intensity.

Removes material one atomic layer at a time using self-limiting surface reactions. Required for nanosheet gate shaping and damage-free profile control at 3 nm and below. Lam Research and TEL lead; ALE adoption expands etch tool intensity per wafer.

Self-limiting, layer-by-layer etch with angstrom-level precision; increasingly required at gate-all-around fin and nanosheet patterning at 3 nm and below.

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